NEOS Oxide Etcher

Description

We are a specialized company of dry etcher with a long experience and engineering technique to develop, manufacture and provide various kinf of etching systems, that can satisfy various needs of customers, are being applied from semiconductor to MEMS, LED and R&D.
NEOSTM oxide etcher is a equipment for silicon dioxide film of 8inch using the new concept developed by MAXIS. NEOS is used for low pressure process using VHF. NEOS, that was developed by specialized engineering capability and know-how, is proud of it's superior performance of etching for silicon dioxide film in the process. NEOS adopted the utmost chamber technique applied for 12inch which allows for this equipment not only to have the more reliable and stable performance in the process, but also to have some merits including the innovation of uniformity by high density plasma, high through put, free damage, will open the new era of technique to each silicon oxide film.

Features

• 12inch under development
• Process capability up to nano feature size
• 8inch cluster tool(3 process chamber available)
• symmetric chamber design
• advanced dual frequency plasma source(80MHz/2MHz)
• Low damage with VHF source
• Ceramic ESC with high resistivity Al2O3 sheet coating
• Low pressure process
• Easy maintenance
• Improved MTBC, MTBF & Reduced CoO

Applications

• Cap, ASC, Deep Contact, Via, Pad(PR Maxk)
• LDD, Oxide Film Planarization(Non Mask)